Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
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BD 0.025
Each (On a Reel of 3000) (Exc. Vat)
BD 0.027
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.025
Each (On a Reel of 3000) (Exc. Vat)
BD 0.027
Each (On a Reel of 3000) (Including VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 6000 | BD 0.025 | BD 75.000 |
9000 - 12000 | BD 0.025 | BD 75.000 |
15000+ | BD 0.025 | BD 75.000 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China