Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
BD 3.630
BD 0.363 Each (In a Pack of 10) (Exc. Vat)
BD 3.993
BD 0.399 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 3.630
BD 0.363 Each (In a Pack of 10) (Exc. Vat)
BD 3.993
BD 0.399 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 20 | BD 0.363 | BD 3.630 |
| 30 - 120 | BD 0.264 | BD 2.640 |
| 130 - 620 | BD 0.220 | BD 2.200 |
| 630 - 1240 | BD 0.214 | BD 2.145 |
| 1250+ | BD 0.214 | BD 2.145 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details


