Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.55mm
Height
1.65mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Please check again later.
BD 0.145
Each (In a Tube of 120) (Exc. Vat)
BD 0.159
Each (In a Tube of 120) (Including VAT)
120
BD 0.145
Each (In a Tube of 120) (Exc. Vat)
BD 0.159
Each (In a Tube of 120) (Including VAT)
120
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
120 - 480 | BD 0.145 | BD 17.400 |
600 - 1080 | BD 0.145 | BD 17.400 |
1200+ | BD 0.140 | BD 16.800 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.55mm
Height
1.65mm
Minimum Operating Temperature
-55 °C
Product details