Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
BD 3.300
BD 0.330 Each (In a Pack of 10) (Exc. Vat)
BD 3.630
BD 0.363 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 3.300
BD 0.330 Each (In a Pack of 10) (Exc. Vat)
BD 3.630
BD 0.363 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 30 | BD 0.330 | BD 3.300 |
| 40 - 190 | BD 0.297 | BD 2.970 |
| 200 - 990 | BD 0.270 | BD 2.695 |
| 1000 - 1990 | BD 0.242 | BD 2.420 |
| 2000+ | BD 0.209 | BD 2.090 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
60 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Maximum Operating Temperature
+150 °C
Height
4.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


