Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
2.6mm
Transistor Material
Si
Length
4.6mm
Typical Gate Charge @ Vgs
5.7 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.6mm
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Please check again later.
BD 0.380
Each (In a Pack of 10) (Exc. Vat)
BD 0.418
Each (In a Pack of 10) (Including VAT)
10
BD 0.380
Each (In a Pack of 10) (Exc. Vat)
BD 0.418
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.380 | BD 3.800 |
50 - 240 | BD 0.340 | BD 3.400 |
250 - 490 | BD 0.330 | BD 3.300 |
500+ | BD 0.325 | BD 3.250 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
2.6mm
Transistor Material
Si
Length
4.6mm
Typical Gate Charge @ Vgs
5.7 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
1.6mm
Product details