Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
BD 2.090
BD 0.418 Each (In a Pack of 5) (Exc. Vat)
BD 2.299
BD 0.460 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 2.090
BD 0.418 Each (In a Pack of 5) (Exc. Vat)
BD 2.299
BD 0.460 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 0.418 | BD 2.090 |
25 - 45 | BD 0.302 | BD 1.512 |
50 - 245 | BD 0.270 | BD 1.348 |
250 - 495 | BD 0.236 | BD 1.182 |
500+ | BD 0.231 | BD 1.155 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Product details