Fuji Electric 7MBP75RA-120-55 3 Phase IGBT Module, 75 A 1200 V, 22-Pin P 610, PCB Mount
Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
500 W
Package Type
P 610
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
22
Transistor Configuration
3 Phase
Dimensions
109 x 88 x 22mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+100 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 90.080
Each (Exc. Vat)
BD 99.088
Each (Including VAT)
1
BD 90.080
Each (Exc. Vat)
BD 99.088
Each (Including VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 1 | BD 90.080 |
| 2 - 4 | BD 81.075 |
| 5 - 9 | BD 77.465 |
| 10 - 19 | BD 74.770 |
| 20+ | BD 73.280 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
500 W
Package Type
P 610
Configuration
3 Phase
Mounting Type
PCB Mount
Channel Type
N
Pin Count
22
Transistor Configuration
3 Phase
Dimensions
109 x 88 x 22mm
Minimum Operating Temperature
-20 °C
Maximum Operating Temperature
+100 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products