Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
360 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.03 x 20.95mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Country of Origin
Japan
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 3.790
Each (In a Tube of 30) (Exc. Vat)
BD 4.169
Each (In a Tube of 30) (Including VAT)
30
BD 3.790
Each (In a Tube of 30) (Exc. Vat)
BD 4.169
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | BD 3.790 | BD 113.700 |
150 - 270 | BD 3.415 | BD 102.450 |
300+ | BD 3.110 | BD 93.300 |
Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
360 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.03 x 20.95mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Country of Origin
Japan
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.