Infineon AIM SiC N-Channel MOSFET, 202 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R010M1TXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
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BD 35.343
BD 35.343 Each (Exc. Vat)
BD 38.877
BD 38.877 Each (inc. VAT)
1
BD 35.343
BD 35.343 Each (Exc. Vat)
BD 38.877
BD 38.877 Each (inc. VAT)
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 35.343 |
| 10+ | BD 31.806 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
202 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products