Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
162 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.004 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
BD 1,394.800
BD 1.744 Each (On a Reel of 800) (Exc. Vat)
BD 1,534.280
BD 1.918 Each (On a Reel of 800) (inc. VAT)
800
BD 1,394.800
BD 1.744 Each (On a Reel of 800) (Exc. Vat)
BD 1,534.280
BD 1.918 Each (On a Reel of 800) (inc. VAT)
800
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
162 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.004 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si