Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
545 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
DirectFET
Mounting Type
Surface Mount
Pin Count
15
Maximum Drain Source Resistance
0.0006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
Transistor Material
Silicon
BD 7.590
BD 3.795 Each (In a Pack of 2) (Exc. Vat)
BD 8.349
BD 4.175 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 7.590
BD 3.795 Each (In a Pack of 2) (Exc. Vat)
BD 8.349
BD 4.175 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 3.795 | BD 7.590 |
10 - 18 | BD 3.416 | BD 6.831 |
20 - 48 | BD 3.223 | BD 6.446 |
50 - 98 | BD 3.020 | BD 6.039 |
100+ | BD 2.832 | BD 5.665 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
545 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
DirectFET
Mounting Type
Surface Mount
Pin Count
15
Maximum Drain Source Resistance
0.0006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
Transistor Material
Silicon