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Dual N-Channel MOSFET Transistor & Diode, 62 A, 55 V, 3-Pin DPAK Infineon AUIRFR48ZTRL

RS Stock No.: 220-7347Brand: InfineonManufacturers Part No.: AUIRFR48ZTRL
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.011 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

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BD 1.140

Each (In a Pack of 5) (Exc. Vat)

BD 1.254

Each (In a Pack of 5) (inc. VAT)

Dual N-Channel MOSFET Transistor & Diode, 62 A, 55 V, 3-Pin DPAK Infineon AUIRFR48ZTRL
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 5.700
10BD 11.400
15BD 17.100
20BD 22.800
25BD 27.000
30BD 32.400
35BD 37.800
40BD 43.200
45BD 48.600
50BD 48.500
55BD 53.350
60BD 58.200
65BD 63.050
70BD 67.900
75BD 72.750

BD 1.140

Each (In a Pack of 5) (Exc. Vat)

BD 1.254

Each (In a Pack of 5) (inc. VAT)

Dual N-Channel MOSFET Transistor & Diode, 62 A, 55 V, 3-Pin DPAK Infineon AUIRFR48ZTRL
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 5.700
10BD 11.400
15BD 17.100
20BD 22.800
25BD 27.000
30BD 32.400
35BD 37.800
40BD 43.200
45BD 48.600
50BD 48.500
55BD 53.350
60BD 58.200
65BD 63.050
70BD 67.900
75BD 72.750

Buy in bulk

quantityUnit pricePer Pack
5 - 20BD 1.140BD 5.700
25 - 45BD 1.080BD 5.400
50 - 120BD 0.970BD 4.850
125 - 245BD 0.890BD 4.450
250+BD 0.855BD 4.275

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.011 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more