Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
BD 6.930
BD 1.386 Each (In a Pack of 5) (Exc. Vat)
BD 7.623
BD 1.525 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 6.930
BD 1.386 Each (In a Pack of 5) (Exc. Vat)
BD 7.623
BD 1.525 Each (In a Pack of 5) (inc. VAT)
Standard
5
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 1.386 | BD 6.930 |
| 50 - 120 | BD 1.221 | BD 6.105 |
| 125 - 245 | BD 1.150 | BD 5.748 |
| 250 - 495 | BD 1.084 | BD 5.418 |
| 500+ | BD 1.018 | BD 5.088 |
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon


