Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
300 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.185 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si
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BD 1.670
Each (In a Tube of 50) (Exc. Vat)
BD 1.837
Each (In a Tube of 50) (Including VAT)
50
BD 1.670
Each (In a Tube of 50) (Exc. Vat)
BD 1.837
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 100 | BD 1.670 | BD 83.500 |
150+ | BD 1.605 | BD 80.250 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
300 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.185 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
1
Transistor Material
Si