Technical Document
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details
Dual Matched Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
Stock information temporarily unavailable.
Please check again later.
BD 0.155
Each (Supplied on a Reel) (Exc. Vat)
BD 0.171
Each (Supplied on a Reel) (Including VAT)
50
BD 0.155
Each (Supplied on a Reel) (Exc. Vat)
BD 0.171
Each (Supplied on a Reel) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 200 | BD 0.155 | BD 7.750 |
250 - 450 | BD 0.065 | BD 3.250 |
500 - 1200 | BD 0.060 | BD 3.000 |
1250 - 2450 | BD 0.055 | BD 2.750 |
2500+ | BD 0.055 | BD 2.750 |
Technical Document
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
250 MHz
Pin Count
6
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details