N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5IATMA1

RS Stock No.: 133-9881Brand: InfineonManufacturers Part No.: BSC009NE2LS5IATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SuperSO8 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+16 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

36 nC @ 10 V

Length

5.49mm

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.62V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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BD 1.000

Each (In a Pack of 5) (Exc. Vat)

BD 1.100

Each (In a Pack of 5) (Including VAT)

N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5IATMA1
Select packaging type

BD 1.000

Each (In a Pack of 5) (Exc. Vat)

BD 1.100

Each (In a Pack of 5) (Including VAT)

N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5IATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 20BD 1.000BD 5.000
25 - 45BD 0.890BD 4.450
50 - 120BD 0.830BD 4.150
125 - 245BD 0.780BD 3.900
250+BD 0.720BD 3.600

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SuperSO8 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+16 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

36 nC @ 10 V

Length

5.49mm

Height

1.1mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.62V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more