Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Series
BSC014N04LS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Forward Diode Voltage
1V
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BD 0.605
Each (In a Pack of 10) (Exc. Vat)
BD 0.665
Each (In a Pack of 10) (Including VAT)
10
BD 0.605
Each (In a Pack of 10) (Exc. Vat)
BD 0.665
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.605 | BD 6.050 |
50 - 90 | BD 0.490 | BD 4.900 |
100 - 240 | BD 0.460 | BD 4.600 |
250 - 490 | BD 0.430 | BD 4.300 |
500+ | BD 0.400 | BD 4.000 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.15mm
Typical Gate Charge @ Vgs
61 nC @ 10 V
Series
BSC014N04LS
Minimum Operating Temperature
-55 °C
Height
1.1mm
Forward Diode Voltage
1V