Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
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BD 0.965
Each (In a Pack of 10) (Exc. Vat)
BD 1.061
Each (In a Pack of 10) (Including VAT)
10
BD 0.965
Each (In a Pack of 10) (Exc. Vat)
BD 1.061
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | BD 0.965 | BD 9.650 |
20 - 40 | BD 0.810 | BD 8.100 |
50 - 90 | BD 0.750 | BD 7.500 |
100 - 240 | BD 0.705 | BD 7.050 |
250+ | BD 0.645 | BD 6.450 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V