Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Stock information temporarily unavailable.
Please check again later.
BD 0.465
Each (In a Pack of 10) (Exc. Vat)
BD 0.511
Each (In a Pack of 10) (Including VAT)
10
BD 0.465
Each (In a Pack of 10) (Exc. Vat)
BD 0.511
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.465 | BD 4.650 |
50 - 90 | BD 0.450 | BD 4.500 |
100 - 240 | BD 0.415 | BD 4.150 |
250 - 490 | BD 0.380 | BD 3.800 |
500+ | BD 0.370 | BD 3.700 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.35mm
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V