Infineon SIPMOS® N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6327XTSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
240 V
Package Type
SOT-223
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.8 nC @ 5 V
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 1.182
BD 0.236 Each (In a Pack of 5) (Exc. Vat)
BD 1.300
BD 0.260 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 1.182
BD 0.236 Each (In a Pack of 5) (Exc. Vat)
BD 1.300
BD 0.260 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.236 | BD 1.182 |
| 50 - 120 | BD 0.214 | BD 1.072 |
| 125 - 245 | BD 0.198 | BD 0.990 |
| 250 - 495 | BD 0.192 | BD 0.962 |
| 500+ | BD 0.182 | BD 0.908 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
240 V
Package Type
SOT-223
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.8 nC @ 5 V
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products