Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

RS Stock No.: 236-4398Brand: InfineonManufacturers Part No.: BSS126IXTSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 mA

Maximum Drain Source Voltage

600 V

Series

SIPMOS®

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 1.485

BD 0.148 Each (In a Pack of 10) (Exc. Vat)

BD 1.633

BD 0.163 Each (In a Pack of 10) (inc. VAT)

Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
Select packaging type

BD 1.485

BD 0.148 Each (In a Pack of 10) (Exc. Vat)

BD 1.633

BD 0.163 Each (In a Pack of 10) (inc. VAT)

Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 90BD 0.148BD 1.485
100 - 240BD 0.143BD 1.430
250 - 490BD 0.138BD 1.375
500 - 990BD 0.132BD 1.320
1000+BD 0.104BD 1.045

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 mA

Maximum Drain Source Voltage

600 V

Series

SIPMOS®

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

700 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1.6V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more