Technical Document
Specifications
Brand
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timing Type
Asynchronous
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
32
Dimensions
20.75 x 11.43 x 2.81mm
Height
2.81mm
Maximum Operating Supply Voltage
5.5 V
Width
11.43mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Temperature
+85 °C
Length
20.75mm
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
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BD 3.560
Each (In a Pack of 2) (Exc. Vat)
BD 3.916
Each (In a Pack of 2) (Including VAT)
2
BD 3.560
Each (In a Pack of 2) (Exc. Vat)
BD 3.916
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 3.560 | BD 7.120 |
10 - 18 | BD 3.465 | BD 6.930 |
20 - 98 | BD 3.370 | BD 6.740 |
100 - 498 | BD 3.280 | BD 6.560 |
500+ | BD 3.205 | BD 6.410 |
Technical Document
Specifications
Brand
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Timing Type
Asynchronous
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
32
Dimensions
20.75 x 11.43 x 2.81mm
Height
2.81mm
Maximum Operating Supply Voltage
5.5 V
Width
11.43mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Temperature
+85 °C
Length
20.75mm
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.