Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
BD 105.650
Each (Exc. Vat)
BD 116.215
Each (Including VAT)
Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Select packaging type
1
BD 105.650
Each (Exc. Vat)
BD 116.215
Each (Including VAT)
Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Stock information temporarily unavailable.
Select packaging type
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 1 | BD 105.650 |
2 - 4 | BD 100.370 |
5+ | BD 96.145 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series