Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1

RS Stock No.: 201-2809Brand: InfineonManufacturers Part No.: FF6MR12W2M1B11BOMA1
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

1200 V

Series

CoolSiC

Package Type

AG-EASY2B

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.00825 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.55V

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

BD 2,710.125

BD 180.675 Each (In a Tray of 15) (Exc. Vat)

BD 2,981.137

BD 198.743 Each (In a Tray of 15) (inc. VAT)

Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1

15

Available in multiples of 15
15BD 2,710.125
30BD 5,420.250
45BD 8,130.375
60BD 10,840.500
75BD 13,550.625
90BD 16,260.750
105BD 18,970.875
120BD 21,681.000
135BD 24,391.125
150BD 27,101.250
165BD 29,811.375
180BD 32,521.500
195BD 35,231.625
210BD 37,941.750
225BD 40,651.875

BD 2,710.125

BD 180.675 Each (In a Tray of 15) (Exc. Vat)

BD 2,981.137

BD 198.743 Each (In a Tray of 15) (inc. VAT)

Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
Stock information temporarily unavailable.

15

Available in multiples of 15
15BD 2,710.125
30BD 5,420.250
45BD 8,130.375
60BD 10,840.500
75BD 13,550.625
90BD 16,260.750
105BD 18,970.875
120BD 21,681.000
135BD 24,391.125
150BD 27,101.250
165BD 29,811.375
180BD 32,521.500
195BD 35,231.625
210BD 37,941.750
225BD 40,651.875

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

200 A

Maximum Drain Source Voltage

1200 V

Series

CoolSiC

Package Type

AG-EASY2B

Mounting Type

Screw Mount

Maximum Drain Source Resistance

0.00825 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.55V

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more