Infineon FS200R12KT4RBOSA1 3 Phase Bridge IGBT Module, 280 A 1200 V, 35-Pin EconoPACK 3, Surface Mount
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
280 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1000 W
Package Type
EconoPACK 3
Configuration
3 Phase Bridge
Mounting Type
Surface Mount
Channel Type
N
Pin Count
35
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Product details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 112.740
Each (Exc. Vat)
BD 124.014
Each (Including VAT)
1
BD 112.740
Each (Exc. Vat)
BD 124.014
Each (Including VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 1 | BD 112.740 |
| 2 - 2 | BD 107.100 |
| 3+ | BD 100.335 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
280 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1000 W
Package Type
EconoPACK 3
Configuration
3 Phase Bridge
Mounting Type
Surface Mount
Channel Type
N
Pin Count
35
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Product details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products