Infineon IFF450B12ME4PB11BPSA1 Dual IGBT Module, 450 A 1200 V ECONOD
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
ECONOD
Configuration
Dual
Channel Type
N
Transistor Configuration
Dual
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BD 93.648
BD 93.648 Each (Exc. Vat)
BD 103.013
BD 103.013 Each (inc. VAT)
Standard
1
BD 93.648
BD 93.648 Each (Exc. Vat)
BD 103.013
BD 103.013 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 1 - 1 | BD 93.648 |
| 2 - 4 | BD 88.968 |
| 5+ | BD 86.493 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
ECONOD
Configuration
Dual
Channel Type
N
Transistor Configuration
Dual
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products