Infineon IKQ50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Switching Speed
60kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3269pF
Maximum Operating Temperature
+175 °C
Energy Rating
4.9mJ
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BD 3.915
Each (In a Tube of 30) (Exc. Vat)
BD 4.307
Each (In a Tube of 30) (Including VAT)
30
BD 3.915
Each (In a Tube of 30) (Exc. Vat)
BD 4.307
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | BD 3.915 | BD 117.450 |
| 150 - 270 | BD 3.610 | BD 108.300 |
| 300 - 570 | BD 3.355 | BD 100.650 |
| 600+ | BD 3.130 | BD 93.900 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Switching Speed
60kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3269pF
Maximum Operating Temperature
+175 °C
Energy Rating
4.9mJ
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products