Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Switching Speed
20kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3270pF
Maximum Operating Temperature
+175 °C
Energy Rating
7.1mJ
Stock information temporarily unavailable.
Please check again later.
BD 4.460
Each (In a Tube of 30) (Exc. Vat)
BD 4.906
Each (In a Tube of 30) (Including VAT)
30
BD 4.460
Each (In a Tube of 30) (Exc. Vat)
BD 4.906
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | BD 4.460 | BD 133.800 |
150 - 270 | BD 4.115 | BD 123.450 |
300 - 570 | BD 3.825 | BD 114.750 |
600+ | BD 3.570 | BD 107.100 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Switching Speed
20kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3270pF
Maximum Operating Temperature
+175 °C
Energy Rating
7.1mJ