Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 162-3334Brand: InfineonManufacturers Part No.: IKZ75N65ES5XKSA1
brand-logo
View all in IGBTs

Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Maximum Operating Temperature

+175 °C

Energy Rating

2.8mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4500pF

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

BD 3.010

Each (Exc. Vat)

BD 3.311

Each (Including VAT)

Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 3.010
2BD 6.020
3BD 9.030
4BD 12.040
5BD 15.000
6BD 18.000
7BD 21.000
8BD 24.000
9BD 27.000
10BD 29.550
11BD 32.505
12BD 35.460
13BD 38.415
14BD 41.370
15BD 44.325

BD 3.010

Each (Exc. Vat)

BD 3.311

Each (Including VAT)

Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 3.010
2BD 6.020
3BD 9.030
4BD 12.040
5BD 15.000
6BD 18.000
7BD 21.000
8BD 24.000
9BD 27.000
10BD 29.550
11BD 32.505
12BD 35.460
13BD 38.415
14BD 41.370
15BD 44.325

Buy in bulk

quantityUnit price
1 - 4BD 3.010
5 - 9BD 3.000
10+BD 2.955

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Maximum Operating Temperature

+175 °C

Energy Rating

2.8mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4500pF

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more