Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1

RS Stock No.: 284-717Brand: InfineonManufacturers Part No.: IMT65R030M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 8.492

BD 8.492 Each (Exc. Vat)

BD 9.341

BD 9.341 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 8.492
2BD 16.984
3BD 25.476
4BD 33.968
5BD 42.460
6BD 50.952
7BD 59.444
8BD 67.936
9BD 76.428
10BD 77.990
11BD 85.789
12BD 93.588
13BD 101.387
14BD 109.186
15BD 116.985

BD 8.492

BD 8.492 Each (Exc. Vat)

BD 9.341

BD 9.341 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 8.492
2BD 16.984
3BD 25.476
4BD 33.968
5BD 42.460
6BD 50.952
7BD 59.444
8BD 67.936
9BD 76.428
10BD 77.990
11BD 85.789
12BD 93.588
13BD 101.387
14BD 109.186
15BD 116.985

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9BD 8.492
10 - 99BD 7.799
100+BD 7.320

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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more