Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC MOSFET 650 V G1
Package Type
PG-HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
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BD 8,822.000
BD 4.411 Each (On a Reel of 2000) (Exc. Vat)
BD 9,704.200
BD 4.852 Each (On a Reel of 2000) (inc. VAT)
2000
BD 8,822.000
BD 4.411 Each (On a Reel of 2000) (Exc. Vat)
BD 9,704.200
BD 4.852 Each (On a Reel of 2000) (inc. VAT)
2000
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Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC MOSFET 650 V G1
Package Type
PG-HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products