Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

RS Stock No.: 284-732Brand: InfineonManufacturers Part No.: IMT65R083M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 4.631

BD 4.631 Each (Exc. Vat)

BD 5.094

BD 5.094 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 4.631
2BD 9.262
3BD 13.893
4BD 18.524
5BD 23.155
6BD 27.786
7BD 32.417
8BD 37.048
9BD 41.679
10BD 42.680
11BD 46.948
12BD 51.216
13BD 55.484
14BD 59.752
15BD 64.020

BD 4.631

BD 4.631 Each (Exc. Vat)

BD 5.094

BD 5.094 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 4.631
2BD 9.262
3BD 13.893
4BD 18.524
5BD 23.155
6BD 27.786
7BD 32.417
8BD 37.048
9BD 41.679
10BD 42.680
11BD 46.948
12BD 51.216
13BD 55.484
14BD 59.752
15BD 64.020

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9BD 4.631
10 - 99BD 4.268
100 - 499BD 4.020
500 - 999BD 3.812
1000+BD 3.498

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more