Infineon IMW1 N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin TO-247 IMW120R350M1HXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Series
IMW1
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Transistor Material
Si
Number of Elements per Chip
1
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BD 39.600
BD 1.320 Each (In a Tube of 30) (Exc. Vat)
BD 43.560
BD 1.452 Each (In a Tube of 30) (inc. VAT)
30
BD 39.600
BD 1.320 Each (In a Tube of 30) (Exc. Vat)
BD 43.560
BD 1.452 Each (In a Tube of 30) (inc. VAT)
30
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Series
IMW1
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Transistor Material
Si
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products