Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1

RS Stock No.: 232-0392Brand: InfineonManufacturers Part No.: IMW65R057M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.074 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 125.400

BD 4.180 Each (In a Tube of 30) (Exc. Vat)

BD 137.940

BD 4.598 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1

30

Available in multiples of 30
30BD 125.400
60BD 238.260
90BD 336.105
120BD 448.140
150BD 560.175
180BD 672.210
210BD 784.245
240BD 896.280
270BD 1,008.315
300BD 1,120.350
330BD 1,232.385
360BD 1,344.420
390BD 1,456.455
420BD 1,568.490
450BD 1,680.525

BD 125.400

BD 4.180 Each (In a Tube of 30) (Exc. Vat)

BD 137.940

BD 4.598 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 125.400
60BD 238.260
90BD 336.105
120BD 448.140
150BD 560.175
180BD 672.210
210BD 784.245
240BD 896.280
270BD 1,008.315
300BD 1,120.350
330BD 1,232.385
360BD 1,344.420
390BD 1,456.455
420BD 1,568.490
450BD 1,680.525

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
30 - 30BD 4.180BD 125.400
60 - 60BD 3.971BD 119.130
90+BD 3.734BD 112.035

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.074 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more