Infineon CoolSiC Silicon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IMW65R107M1HXKSA1

RS Stock No.: 232-0398Brand: InfineonManufacturers Part No.: IMW65R107M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.142 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 90.915

BD 3.030 Each (In a Tube of 30) (Exc. Vat)

BD 100.007

BD 3.333 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IMW65R107M1HXKSA1

30

Available in multiples of 30
30BD 90.915
60BD 172.590
90BD 258.885
120BD 345.180
150BD 416.625
180BD 499.950
210BD 583.275
240BD 666.600
270BD 749.925
300BD 833.250
330BD 916.575
360BD 999.900
390BD 1,083.225
420BD 1,166.550
450BD 1,249.875

BD 90.915

BD 3.030 Each (In a Tube of 30) (Exc. Vat)

BD 100.007

BD 3.333 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IMW65R107M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 90.915
60BD 172.590
90BD 258.885
120BD 345.180
150BD 416.625
180BD 499.950
210BD 583.275
240BD 666.600
270BD 749.925
300BD 833.250
330BD 916.575
360BD 999.900
390BD 1,083.225
420BD 1,166.550
450BD 1,249.875

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
30 - 30BD 3.030BD 90.915
60 - 120BD 2.876BD 86.295
150+BD 2.778BD 83.325

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.142 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more