Infineon CoolSiC Silicon N-Channel MOSFET, 53 A, 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1

RS Stock No.: 232-0403Brand: InfineonManufacturers Part No.: IMZA65R030M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.042 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 5.819

BD 5.819 Each (Exc. Vat)

BD 6.401

BD 6.401 Each (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 53 A, 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 5.819
2BD 11.638
3BD 17.457
4BD 23.276
5BD 27.665
6BD 33.198
7BD 38.731
8BD 44.264
9BD 49.797
10BD 53.405
11BD 58.746
12BD 64.086
13BD 69.426
14BD 74.767
15BD 80.108

BD 5.819

BD 5.819 Each (Exc. Vat)

BD 6.401

BD 6.401 Each (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 53 A, 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 5.819
2BD 11.638
3BD 17.457
4BD 23.276
5BD 27.665
6BD 33.198
7BD 38.731
8BD 44.264
9BD 49.797
10BD 53.405
11BD 58.746
12BD 64.086
13BD 69.426
14BD 74.767
15BD 80.108

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 4BD 5.819
5 - 9BD 5.533
10 - 24BD 5.340
25 - 49BD 5.181
50+BD 4.906

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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

53 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.042 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more