Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 4-Pin TO-247-4 IMZA65R048M1HXKSA1

RS Stock No.: 232-0406Brand: InfineonManufacturers Part No.: IMZA65R048M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 82.995

BD 2.766 Each (In a Tube of 30) (Exc. Vat)

BD 91.295

BD 3.043 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 4-Pin TO-247-4 IMZA65R048M1HXKSA1

30

Available in multiples of 30
30BD 82.995
60BD 157.410
90BD 223.245
120BD 297.660
150BD 372.075
180BD 446.490
210BD 520.905
240BD 595.320
270BD 669.735
300BD 744.150
330BD 818.565
360BD 892.980
390BD 967.395
420BD 1,041.810
450BD 1,116.225

BD 82.995

BD 2.766 Each (In a Tube of 30) (Exc. Vat)

BD 91.295

BD 3.043 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 4-Pin TO-247-4 IMZA65R048M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 82.995
60BD 157.410
90BD 223.245
120BD 297.660
150BD 372.075
180BD 446.490
210BD 520.905
240BD 595.320
270BD 669.735
300BD 744.150
330BD 818.565
360BD 892.980
390BD 967.395
420BD 1,041.810
450BD 1,116.225

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
30 - 30BD 2.766BD 82.995
60 - 60BD 2.624BD 78.705
90+BD 2.480BD 74.415

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more