Infineon N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.85mm
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.15mm
Country of Origin
Malaysia
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 91.575
BD 1.832 Each (In a Tube of 50) (Exc. Vat)
BD 100.733
BD 2.015 Each (In a Tube of 50) (inc. VAT)
50
BD 91.575
BD 1.832 Each (In a Tube of 50) (Exc. Vat)
BD 100.733
BD 2.015 Each (In a Tube of 50) (inc. VAT)
50
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Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 1.832 | BD 91.575 |
| 100 - 200 | BD 1.738 | BD 86.900 |
| 250+ | BD 1.650 | BD 82.500 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.85mm
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.15mm
Country of Origin
Malaysia
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products