Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 9.548
BD 2.387 Each (In a Pack of 4) (Exc. Vat)
BD 10.503
BD 2.626 Each (In a Pack of 4) (inc. VAT)
Standard
4
BD 9.548
BD 2.387 Each (In a Pack of 4) (Exc. Vat)
BD 10.503
BD 2.626 Each (In a Pack of 4) (inc. VAT)
Standard
4
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 16 | BD 2.387 | BD 9.548 |
| 20 - 36 | BD 2.266 | BD 9.064 |
| 40 - 96 | BD 2.172 | BD 8.690 |
| 100 - 196 | BD 2.101 | BD 8.404 |
| 200+ | BD 1.991 | BD 7.964 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products