Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Height
16.15mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.85V
Country of Origin
Malaysia
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 0.875
Each (In a Pack of 5) (Exc. Vat)
BD 0.963
Each (In a Pack of 5) (Including VAT)
5
BD 0.875
Each (In a Pack of 5) (Exc. Vat)
BD 0.963
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 0.875 | BD 4.375 |
25 - 120 | BD 0.725 | BD 3.625 |
125 - 245 | BD 0.610 | BD 3.050 |
250+ | BD 0.590 | BD 2.950 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Height
16.15mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.85V
Country of Origin
Malaysia
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.