N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1

RS Stock No.: 753-2992Brand: InfineonManufacturers Part No.: IPA60R190C6XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Width

4.57mm

Transistor Material

Si

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Height

9.45mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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BD 1.634

BD 1.634 Each (Exc. Vat)

BD 1.797

BD 1.797 Each (inc. VAT)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1

BD 1.634

BD 1.634 Each (Exc. Vat)

BD 1.797

BD 1.797 Each (inc. VAT)

N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit price
1 - 9BD 1.634
10 - 24BD 1.397
25+BD 1.342

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Width

4.57mm

Transistor Material

Si

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Height

9.45mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more