Infineon CoolMOS CP N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 FP IPA60R199CPXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
199 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.85mm
Length
10.65mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.15mm
Country of Origin
China
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 74.250
BD 1.485 Each (In a Tube of 50) (Exc. Vat)
BD 81.675
BD 1.633 Each (In a Tube of 50) (inc. VAT)
50
BD 74.250
BD 1.485 Each (In a Tube of 50) (Exc. Vat)
BD 81.675
BD 1.633 Each (In a Tube of 50) (inc. VAT)
50
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Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 1.485 | BD 74.250 |
| 100 - 200 | BD 1.370 | BD 68.475 |
| 250+ | BD 1.298 | BD 64.900 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS CP
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
199 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.85mm
Length
10.65mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.15mm
Country of Origin
China
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products