Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 56.650
BD 1.133 Each (In a Tube of 50) (Exc. Vat)
BD 62.315
BD 1.246 Each (In a Tube of 50) (inc. VAT)
50
BD 56.650
BD 1.133 Each (In a Tube of 50) (Exc. Vat)
BD 62.315
BD 1.246 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 1.133 | BD 56.650 |
100 - 200 | BD 1.018 | BD 50.875 |
250+ | BD 0.968 | BD 48.400 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si