Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
BD 10.615
BD 2.123 Each (In a Pack of 5) (Exc. Vat)
BD 11.677
BD 2.335 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 10.615
BD 2.123 Each (In a Pack of 5) (Exc. Vat)
BD 11.677
BD 2.335 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | BD 2.123 | BD 10.615 |
| 10 - 20 | BD 1.914 | BD 9.570 |
| 25 - 45 | BD 1.782 | BD 8.910 |
| 50 - 120 | BD 1.678 | BD 8.388 |
| 125+ | BD 1.595 | BD 7.975 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1


