Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.225 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 9.185
BD 0.918 Each (In a Pack of 10) (Exc. Vat)
BD 10.103
BD 1.010 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 9.185
BD 0.918 Each (In a Pack of 10) (Exc. Vat)
BD 10.103
BD 1.010 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 10 | BD 0.918 | BD 9.185 |
| 20 - 40 | BD 0.869 | BD 8.690 |
| 50 - 90 | BD 0.836 | BD 8.360 |
| 100 - 240 | BD 0.808 | BD 8.085 |
| 250+ | BD 0.764 | BD 7.645 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.225 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si


