Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
15.1 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.4 Ω
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
BD 22.000
BD 0.440 Each (In a Tube of 50) (Exc. Vat)
BD 24.200
BD 0.484 Each (In a Tube of 50) (inc. VAT)
50
BD 22.000
BD 0.440 Each (In a Tube of 50) (Exc. Vat)
BD 24.200
BD 0.484 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.440 | BD 22.000 |
| 100 - 200 | BD 0.363 | BD 18.150 |
| 250 - 450 | BD 0.346 | BD 17.325 |
| 500 - 950 | BD 0.324 | BD 16.225 |
| 1000+ | BD 0.302 | BD 15.125 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
15.1 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ CE
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.4 Ω
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si


