Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1

RS Stock No.: 262-5850PBrand: InfineonManufacturers Part No.: IPB014N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

191 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.755

Each (Supplied on a Reel) (Exc. Vat)

BD 0.831

Each (Supplied on a Reel) (Including VAT)

Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.775
10BD 7.550
15BD 11.325
20BD 15.100
25BD 18.875
30BD 22.650
35BD 26.425
40BD 30.200
45BD 33.975
50BD 34.000
55BD 37.400
60BD 40.800
65BD 44.200
70BD 47.600
75BD 51.000

BD 0.755

Each (Supplied on a Reel) (Exc. Vat)

BD 0.831

Each (Supplied on a Reel) (Including VAT)

Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.775
10BD 7.550
15BD 11.325
20BD 15.100
25BD 18.875
30BD 22.650
35BD 26.425
40BD 30.200
45BD 33.975
50BD 34.000
55BD 37.400
60BD 40.800
65BD 44.200
70BD 47.600
75BD 51.000

Buy in bulk

quantityUnit pricePer Reel
5 - 45BD 0.755BD 3.775
50 - 120BD 0.680BD 3.400
125 - 245BD 0.635BD 3.175
250 - 495BD 0.590BD 2.950
500+BD 0.545BD 2.725

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

191 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more