Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1

RS Stock No.: 262-5855Brand: InfineonManufacturers Part No.: IPB018N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 4.868

BD 0.974 Each (In a Pack of 5) (Exc. Vat)

BD 5.355

BD 1.071 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.868
10BD 9.735
15BD 14.602
20BD 19.470
25BD 22.000
30BD 26.400
35BD 30.800
40BD 35.200
45BD 39.600
50BD 41.250
55BD 45.375
60BD 49.500
65BD 53.625
70BD 57.750
75BD 61.875

BD 4.868

BD 0.974 Each (In a Pack of 5) (Exc. Vat)

BD 5.355

BD 1.071 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.868
10BD 9.735
15BD 14.602
20BD 19.470
25BD 22.000
30BD 26.400
35BD 30.800
40BD 35.200
45BD 39.600
50BD 41.250
55BD 45.375
60BD 49.500
65BD 53.625
70BD 57.750
75BD 61.875

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20BD 0.974BD 4.868
25 - 45BD 0.880BD 4.400
50 - 120BD 0.825BD 4.125
125 - 245BD 0.776BD 3.878
250+BD 0.726BD 3.630

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more