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Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1

RS Stock No.: 262-5857PBrand: InfineonManufacturers Part No.: IPB023N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.760

Each (Supplied on a Reel) (Exc. Vat)

BD 0.836

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.800
10BD 7.600
15BD 11.400
20BD 15.200
25BD 19.000
30BD 22.800
35BD 26.600
40BD 30.400
45BD 34.200
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625

BD 0.760

Each (Supplied on a Reel) (Exc. Vat)

BD 0.836

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.800
10BD 7.600
15BD 11.400
20BD 15.200
25BD 19.000
30BD 22.800
35BD 26.600
40BD 30.400
45BD 34.200
50BD 33.750
55BD 37.125
60BD 40.500
65BD 43.875
70BD 47.250
75BD 50.625

Buy in bulk

quantityUnit pricePer Reel
5 - 45BD 0.760BD 3.800
50 - 120BD 0.675BD 3.375
125 - 245BD 0.640BD 3.200
250 - 495BD 0.610BD 3.050
500+BD 0.575BD 2.875

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more