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Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1

RS Stock No.: 262-5859Brand: InfineonManufacturers Part No.: IPB029N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 4.208

BD 0.842 Each (In a Pack of 5) (Exc. Vat)

BD 4.629

BD 0.926 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.208
10BD 8.415
15BD 12.622
20BD 16.830
25BD 21.038
30BD 25.245
35BD 29.452
40BD 33.660
45BD 37.868
50BD 38.225
55BD 42.048
60BD 45.870
65BD 49.692
70BD 53.515
75BD 57.338

BD 4.208

BD 0.842 Each (In a Pack of 5) (Exc. Vat)

BD 4.629

BD 0.926 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.208
10BD 8.415
15BD 12.622
20BD 16.830
25BD 21.038
30BD 25.245
35BD 29.452
40BD 33.660
45BD 37.868
50BD 38.225
55BD 42.048
60BD 45.870
65BD 49.692
70BD 53.515
75BD 57.338

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45BD 0.842BD 4.208
50 - 120BD 0.764BD 3.822
125 - 245BD 0.720BD 3.602
250 - 495BD 0.682BD 3.410
500+BD 0.638BD 3.190

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more