Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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BD 4.345
BD 0.869 Each (In a Pack of 5) (Exc. Vat)
BD 4.779
BD 0.956 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.345
BD 0.869 Each (In a Pack of 5) (Exc. Vat)
BD 4.779
BD 0.956 Each (In a Pack of 5) (inc. VAT)
Standard
5
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.869 | BD 4.345 |
| 50 - 120 | BD 0.792 | BD 3.960 |
| 125 - 245 | BD 0.742 | BD 3.712 |
| 250 - 495 | BD 0.698 | BD 3.492 |
| 500+ | BD 0.660 | BD 3.300 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products